单晶氮化镓的应用

Applications of Mono-crystalline GaN

姓名（Name）: Dr. Robert Dwiliński

毕业院校（University）:

波兰华沙大学

University of Warsaw

研究领域(Experience/Expertise):

获取单晶氮化镓（GaN）的氨热法

Ammonothermal method for obtaining mono-crystalline gallium nitride (GaN.)

用于获取单晶氮化镓（GaN）的氨热法与众所周知生产石英（SiO2）的工业水热法类似，该方法每年可以生产数十吨的合成石英。除了可以良好控制在自己的GaN晶种上生长高质量GaN晶体外，该方法的主要优点还包括：

（1）费用低——原材料可以有效转化为产品，工艺压力和温度相对较低，可以实现自动化监督；

（2）可扩展——小型高压灭菌器工艺与大型高压灭菌器工艺相同，可以同时安装和种植数百个晶种。该方法是唯一能够提供大尺寸非极性基板，且工作效率接近于GaN基半导体理论效率的方法。

TheAmmonothermal method for obtaining mono-crystalline gallium nitride (GaN) is analogous to the well known industrial hydrothermal method of quartz (SiO2) production which results in production of tens of tons of synthetic quartz per year. Besides very well controlled growth of high quality GaN crystals on own GaNseeds the main advantages of this method are:

(1)low cost due to efficient conversion of raw materials into the product, relatively low pressure and temperature of the process as well as its automated supervision and

(2)scalability – the process in a small autoclave is the same as the process in a large autoclave, in which hundreds of seeds can be installed and grow simultaneously). It is the only method, which could deliver large size non-polar substrates capable of obtaining the efficiency close to the theoretical efficiency of GaN based semiconductors.