Gallium Nitride Transistors - Future of the Semiconductors氮化镓晶体：半导体的未来

多年来，电力电子设计师们一直生活在一个5-10%业绩增长是常态，20%业绩增长是优秀的年代。我们已经证明了氮化镓在利用典型的第八砖设计，能够在常规拓扑结构中提供70%功率密度的提升，并且在全面监管的情况下将功率从300w提升到500w以上，这是硬切换的设计。此外，我们还证明了未经调节的硬切换设计能够将功率提升到650w以上。更重要的是，这还有提升的空间。

For many years power electronics designers have been living in an era where increases in performance of 5-10% are the norm, and 20% is outstanding. We have shown that GaN can provide a 70% power density improvement in a conventional topology by taking a typical eighth-brick design and boosting the power from 300W to over 500W in a fully regulated, hard switched design. Furthermore, we’ve shown that unregulated hard-switched designs can be pushed over 650W. What’s more – there is still room to grow.